inchange semiconductor product specification silicon npn dalington power transistors BD643 description ? with to-220c package ? complement to type bd644 ? darlington applications ? for use in output stages in audio equipment ,general amplifier,and analogue switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 45 v v ceo collector-emitter voltage open base 45 v v ebo emitter-base voltage open collector 5 v i c collector current-dc 8 a i cm collector current-pulse 12 a i b base current 150 a p c collector power dissipation t c =25 ?? 62.5 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.5 ??/w
inchange semiconductor product specification 2 silicon npn dalington power transistors BD643 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =0.1a, i b =0 45 v v (br)cbo collector-base breakdown voltage i c =5ma, i e =0 45 v v (br)ebo emitter-base breakdown voltage i e =2ma, i c =0 5 v v cesat collector-emitter saturation voltage i c =3a ,i b =12ma 2.0 v v be base-emitter voltage i c =3a , v ce =3v 2.5 v i cbo collector cut-off current v cb =v cbmax ; i e =02 0.2 ma i ceo collector cut-off current v ce =1/2 v cemax ; i b =0 0.5 ma i ebo emitter cut-off current v eb =5v; i c =0 5 ma h fe-1 dc current gain i c =0.5a ; v ce =3v 1500 h fe-2 dc current gain i c =3a ; v ce =3v 750 h fe-3 dc current gain i c =6a ; v ce =3v 750 v f diode forward voltage i f =3a 1.8 v f t transition frequency i c =3a;v ce =3v;f=1mhz 7 mhz
inchange semiconductor product specification 3 silicon npn dalington power transistors BD643 package outline fig.2 outline dimensions
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